1996. 1. 28 1/3 semiconductor technical data KN2222/a epitaxial planar npn transistor revision no : 0 general purpose application. switching application. features low leakage current : i cex =10na(max.) ; v ce =60v, v eb(off) =3v. low saturation voltage : v ce(sat) =0.3v(max.) ; i c =150ma, i b =15ma. complementary to the kn2907/2907a. maximum rating (ta=25 1 ) to-92 dim millimeters a b c d f g h j k l 4.70 max 4.80 max 3.70 max 0.45 1.00 1.27 0.85 0.45 14.00 0.50 0.55 max 2.30 d 1 2 3 b a j k g h f f l e c e c m n 0.45 max m 1.00 n 1. emitter 3. collector 2. base + _ characteristic symbol rating unit KN2222 KN2222a collector-base voltage v cbo 60 75 v collector-emitter voltage v ceo 30 40 v emitter-base voltage v ebo 5 6 v collector current i c 600 ma collector power dissipation (ta=25 1 ) p c 625 mw junction temperature t j 150 1 storage temperature range t stg -55 150 1
1996. 1. 28 2/3 revision no : 0 electrical characteristics (ta=25 1 ) KN2222/a * pulse test : pulse width # 300 s, duty cycle # 2%. characteristic symbol test condition min. typ. max. unit collector cut-off current KN2222a i cex v ce =60v, v eb(off) =3v - - 10 na collector cut-off current KN2222 i cbo v cb =50v, i e =0 - - 10 na KN2222a v cb =60v, i e =0 - - 10 emitter cut-off current KN2222a i ebo v eb =3v, i c =0 - - 10 na collector-base breakdown voltage KN2222 v (br)cbo i c =10 a, i e =0 60 - - v KN2222a 75 - - collector-emitter * breakdown voltage KN2222 v (br)ceo i e =10ma, i b =0 30 - - v KN2222a 40 - - emitter-base breakdown voltage KN2222 v (br)ebo i e =10 a, i c =0 5 - - v KN2222a 6 - - dc current gain * KN2222 KN2222a h fe (1) i c =0.1ma, v ce =10v 35 - - h fe (2) i c =1ma, v ce =10v 50 - - h fe (3) i c =10ma, v ce =10v 75 - - h fe (4) i c =150ma, v ce =10v 100 - 300 KN2222 h fe (5) i c =500ma, v ce =10v 30 - - KN2222a 40 - - collector-emitter * saturation voltage KN2222 v ce(sat) 1 i c =150ma, i b =15ma - - 0.4 v KN2222a - - 0.3 KN2222 v ce(sat) 2 i c =500ma, i b =50ma - - 1.6 KN2222a - - 1.0 base-emitter * saturation voltage KN2222 v be(sat) 1 i c =150ma, i b =15ma - - 1.3 v KN2222a 0.6 - 1.2 KN2222 v be(sat) 2 i c =500ma, i b =50ma - - 2.6 KN2222a - - 2.0 transition frequency KN2222 f t i c =20ma, v ce =20v f=100mhz 250 - - mhz KN2222a 300 - - collector output capacitance c ob v cb =10v, i e =0, f=1.0mhz - - 8 pf
1996. 1. 28 3/3 KN2222/a revision no : 0 collector power dissipation 0 c 0 ambient temperature ta ( c) pc - ta capacitance c (pf) 0 ob 30 10 3 1 collector-base voltage v (v) cb c - v h - i c collector current i (ma) 1 3 10 30 1k fe dc current gain h 10 collector current i (ma) saturation voltage 3 1 be(sat) 30 10 c v , v - i fe c 300 1k 30 50 100 300 500 100 v =10v ce be(sat) ce(sat) c v ,v (v) ce(sat) 100 300 1k 0.01 0.03 0.05 0.1 0.3 0.5 1 3 5 10 v be(sat) ce(sat) v ob cb 100 200 p (mw) 25 50 75 100 125 150 175 100 200 300 400 500 600 700 i /i =10 c b 2 4 6 8 12 i =0 f=1mhz e 10
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